npn silicon power darlington transistors general-purpose epibase power darl ington transistors, suitable for linear and switching applications. replacement for 2n3055 and driver high gain darlington performance built-in diode protection for reverse polarity protection can be driven from low-level logic popular voltage range operating range ? -65 to t200c 2h6576 2h6577 2n6578 i i total power dissipation @ tc = 25c ?120? watts derate above 25c a 0.685 ? wloc operating and storage junction,+~~!{i ?3*<:,* ! > tj ,t~tg ~-65 to t200 ~ ~., oc ? temperature range ,., ? ~:p.! , ,y, thermal charac,@~ls*~cs 4 character& l&~.s$s? ~t\ : >u... symbol max unit thermal flesistang~+~~~$ion to case r~jc 1.46 oclw maximum lea@t~~&ature for soldering tl 265 ?c purposq#n4 j$~? }rom case for 10s. , i dar lington schematic collector d! ~----- 1 base ?4? it =150? ~ lz4 k__ j emitter lfa?~l*c & ~ _; ! seating y plane style i: pin 1. base b f 2. emitter j case: collector q h t ?~~> millimeters i inches dim min i max i min max i i case 11-03 to-3 i epi base is a trademerk of motorole inc. ~motorola inc., 197a u> 6jd3 (replaces ad i 327) ,...,,,, . -- ----
*electrical characteristics (tc = 25c unless otherwise noted.) i characteristic symbol min i max i unit off characteristics i collector-emitter sustaining voltage(l) vceo($?s) ([c= 200madc, ib =0) vdc 2n6576 60 1 i i 2N6577 a., fi --- v- collector cutoff current (vcer = rated vceo(sus) value, rbe = 10,kq, tc = 150c) i ,lcu i i collector cutoff current icev ? vcex = rated vceo(sus) v?alue, vge(off) = 1.5 vdc) ?.? ~~,,,t ~~ . . ~~ r,, ,-u- ,,< ,,+ ,.~l, . ... .:> collector cutoff current >. ,+ . . icbo (vcb = rated value) ? ~:~,>;$<$,>~ madc ?\:?i =- ??i~$~j,, ~.~?~ on characteristics %*, .,,, . . .@ie>;, dc current gain hfe ., ~ ,s;ti~.,. \ ~~ i<~,,.,.,.. ,., {ic = 15 adc, vce = 4.0 vdc) ? 1 @?!?z? ?% ~? ? (!c = 10 adc, vce = 3.0 vdc) ,$%s;>,? 5,000 (1c = 4.0 adc, vce = 3.0 vdcl 20,000 (ic = 0.4 adc, vce = 3.0 vdc) ..3 $$? ?%ti 2 ? collector-emitter saturation voltage ,.i\ ._ ([c= 10 adc, ib=o.l adc) 4.0 ?::*,,,, >,::$ ,,.:.~~} ~.,.? ,-.j ? 2.8 base-emitter saturation voltage \,.t. ,$$. ~ ,:sv;g~wt) (it= 15 adc, lg=0.15adc) vdc ~.~:> ~:: . .,tj.,. \,,\\?, vf, ? (i ec=15adc) 4.5 vdc ? .?jj, , ? .+~f&&t<~q, .,. .,, dynamic characteristics ?i~, .\ ? magnitude of commo,n-emitter small-signal short-circuit curre~# tra#sfer ratio ihfel 10 200 (ic = 3.0 adc, vce = 3.0 vdc; f,= 1.0 mhz) . s:?q{+c), ? switching characteristics .:$? ? ? ~:?>;.\.~?.>,&:*:i?t+ resistive load (figure 2) ,a,l, s, , .,, ***,, *t:. , , .;,? ., delay time (vcc = 30 vdc, ic =?10 ad$;$~~8.1 adc, td ? 0.15 ~ rise time #s tp = 300 ps, dutv cvcl$a*3~@~+ tr ? 1.0 storage time (vcc = 30 vdc, ic ?i~~~~?yibl = ib2= 0.1 adc, ps t~ fall time ? 2.0 ps tp = 300 ps, duk$~v?c~&+@ 2.0%) $i ,i~ tf ? 7.0 ps ..,&$~&:#::? * indicates jedec registered data $? (1) pulse test: pulse width < 30,q,4/$~&&& cvcle < 2.0%. .:?. ~:\t;\: , ,\\ , -%?. ,;$ ,>? l\ :)~? ,:.,/ ,., figure 1 ? ~?~fij@orward biased sa,~@;&?%ating area i % 1.o ~-?- b~ndingwirs limit juwll !- there are two limitations on the power handling abilitv of a transistor: average junction temperature and second breakdown. safe operating area curves indicate ic-vce limits of the transis- tor that must be?observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate. the data of figure 1 is based on tc = 25c; tj(pk) is variable depending on power level. second breakdown pulse i imits are valid for duty cycles to 10%. tj(pk) may be calculated from the data in figure 7. at high case temperatures thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown. ,. ?l vce, collector-emitter voltage (volts) ~ motorola semiconductor products /nc.
figure 2? dc current gain figure?3 ? collector-saturation region 5uu - -juql - 1 \ 200 1 i i i i i i i ii i i i i [ i i i ii \l 0.2 0.5 t ,0 .2.0 5:0 ?lo 15 ic, collector cur rent (amps) figure 4 ? collector saturation voltage 1 @jc(t) = r(t) ejc ojc = 1.46 m ~ ?i?? i i i i dcurvesapplyforpower ti u.ul ---- .. ---,-. , , . l ? 0.01 , 1 1 i 1 1 1 1 i 11111! i i i ti iii i i i i i i i i i 0.01 i i i i ill 0.1 i 0,2 [ i i i i i ill] 0,3 0,5 0.7 1,0 2.0 3,0 5.0 7.0 10 20 30 50 70 100 200 300 500 700 1000 t, time (msl m motorola semiconductor products inc.
-,:,:, , ,, .,, ,?.. ., .,, ., ,? : l a l l ,, figure 7- witching times test circuit -9.0 v tr, tf |
